GaN metal–semiconductor–metal ultraviolet photodetector with IrO2 Schottky contact
نویسندگان
چکیده
منابع مشابه
Metal-semiconductor-metal ultraviolet photodetector based on GaN
A metal-semiconductor-metal (MSM) ultraviolet photodetector has been fabricated using unintentionally doped n-GaN films grown on sapphire substrates. Its dark current, photocurrent under the illumination with λ = 360 nm light, responsivity, and the dependence of responsivity on bias voltage were measured at room temperature. The dark current of the photodetector is 1.03 nA under 5 V bias, and i...
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Photodetectors in a configuration of field effect transistor were fabricated based on individual W18O49 nanowires. Evaluation of electrical transport behavior indicates that the W18O49 nanowires are n-type semiconductors. The photodetectors show high sensitivity, stability and reversibility to ultraviolet (UV) light. A high photoconductive gain of 104 was obtained, and the photoconductivity is ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2002
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.1524035